Silicon carbide schottky-barrier diode device and method for manufacturing the same

ABSTRACT

The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. §119(a) to KoreanPatent Application No. 10-2011-0114972, filed Nov. 7, 2011, the entirecontents of which are incorporated herein by reference.

BACKGROUND

(a) Technical Field

The present invention relates to a silicon carbide Schottky-barrierdiode device and a method for manufacturing the same. More particularly,it relates to a silicon carbide Schottky-barrier diode device, whichreduces on-resistance through ion-implantation into a conduction region,and a method for manufacturing the same.

(b) Background Art

Recently, there has been a trend toward the development of applicationdevices with a larger size and capacity, which has created a growingdemand for semiconductor power devices having high breakdown voltage,high current, and high-speed switching characteristics.

Silicon carbide (SiC) power devices have better characteristics thansilicon (Si) based power devices with respect to high breakdown voltage,high current, and high-speed switching characteristics.

In the case of a conventional art SiC Schottky barrier diode (SBD), alightly-doped epitaxial layer with increased thickness is generallyapplied to improve the breakdown voltage of a device. However, thismethod is disadvantageous because when there is a thick, lightly-dopedepitaxial layer in a conduction region, the resistance of the conductionregion increases upon application of a forward voltage, thereby reducingthe on-resistance characteristics of the device. As a result of theabove limitation, the development of a SiC Schottky barrier diode (SBD)generally requires the application of a termination structure thatdisplays improved withstanding voltage characteristics when used with anepitaxial layer of minimal thickness.

Accordingly, in a Schottky barrier diode, the on-resistancecharacteristics depend on the doping concentration and distance betweena cathode electrode and a Schottky contact in which a current flows.Similarly, the breakdown voltage characteristics depend on the dopingconcentration and the distance between the cathode electrode and theSchottky contact. However, due to the electric field crowding effect,the on-resistance and breakdown voltage characteristics are primarilydetermined by the structure of the edge termination of a Schottkyjunction.

In view of the foregoing, there is a need in the art for SiC Schottkybarrier diodes that do not suffer from the above disadvantagesassociated with conventional art SiC diodes.

SUMMARY OF THE DISCLOSURE

The present invention provides a silicon carbide (SiC) Schottky barrierdiode device, and a method for manufacturing the same, in whichon-resistance is reduced by allowing a current to flow into ahighly-doped conduction region upon application of a forward voltage.Additionally, the breakdown voltage is not reduced upon application of abackward voltage. According to an aspect of the invention, theconduction regions is formed by implanting n+ ions into an n− epitaxiallayer of a device to overcome weakening of current characteristics dueto increase of the on-resistance upon application of the forward voltageof the device, which typically occur when a lightly-doped conductionregion is thickly formed to improve the withstanding voltagecharacteristics.

In one aspect, the present invention provides a SiC Schottky barrierdiode device including: a primary n− epitaxial layer deposited on an n+substrate joined with an ohmic metal layer at an undersurface thereof;an n+ epitaxial region formed by implanting n+ ions into a centralregion of the primary n− epitaxial layer; and a Schottky metal layerdeposited on the n+ epitaxial region.

In an exemplary embodiment, the SiC Schottky barrier diode device mayfurther include a secondary n− epitaxial layer deposited on the primaryn− epitaxial layer and the n+ epitaxial region.

In another aspect, the present invention provides a method formanufacturing a silicon carbide Schottky barrier diode device,including: depositing a primary n− epitaxial layer on an n+ substrate ofa wafer state; forming an n+ epitaxial region by implanting n+ ions intoa central region of the primary n− epitaxial layer; and depositing anohmic metal layer on an undersurface of the n+ substrate and depositinga Schottky metal layer directly on the n+ epitaxial layer.

In an exemplary embodiment, the method may further include forming asecondary n− epitaxial layer on the primary n− epitaxial layer and then+ epitaxial layer under the Schottky metal layer.

In another exemplary embodiment, the method may further includeadditionally depositing the n− epitaxial layer and then more thicklyforming the n+ epitaxial layer in a central region thereof by ionimplantation.

The above and other features of the invention are discussed infra.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the present invention will now bedescribed in detail with reference to certain exemplary embodimentsthereof illustrated in the accompanying drawings, which are givenhereinbelow by way of illustration only, and thus are not limitative ofthe present invention, and wherein:

FIGS. 1 through 4 are cross-sectional views illustrating a process formanufacturing a silicon carbide Schottky barrier diode device accordingto an embodiment of the present invention;

FIG. 5 is a cross-sectional view illustrating a silicon carbide Schottkybarrier diode device and a current flow state according to an embodimentof the present invention;

FIG. 6A shows the structure of a typical diode of the conventional art,and FIGS. 6B and 6C show cross-sectional views illustrating a structureof a silicon carbide Schottky barrier diode device for a test example ofthe present invention; and

FIGS. 7 and 8 are graphs illustrating results of a test example of thepresent invention.

Reference numerals set forth in the Drawings includes reference to thefollowing elements as further discussed below:

-   -   10: n+ substrate    -   11: primary n− epitaxial layer    -   12: secondary n− epitaxial layer    -   13: n+ epitaxial layer    -   14: Schottky metal layer    -   15: ohmic metal layer

It should be understood that the appended drawings are not necessarilyto scale, presenting a somewhat simplified representation of variouspreferred features illustrative of the basic principles of theinvention. The specific design features of the present invention asdisclosed herein, including, for example, specific dimensions,orientations, locations, and shapes will be determined in part by theparticular intended application and use environment.

In the figures, reference numbers refer to the same or equivalent partsof the present invention throughout the several figures of the drawing.

DETAILED DESCRIPTION

Hereinafter reference will now be made in detail to various embodimentsof the present invention, examples of which are illustrated in theaccompanying drawings and described below. While the invention will bedescribed in conjunction with exemplary embodiments, it will beunderstood that the present description is not intended to limit theinvention to those exemplary embodiments. On the contrary, the inventionis intended to cover not only the exemplary embodiments, but alsovarious alternatives, modifications, equivalents and other embodiments,which may be included within the spirit and scope of the invention asdefined by the appended claims.

Unless specifically stated or obvious from context, as used herein, theterm “about” understood as within a range of normal tolerance in theart, for example within 2 standard deviations of the mean. “About” canbe understood as within 10%, 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, 1%, 0.5%,0.1%, 0.05%, or 0.01% of the stated value. Unless otherwise clear fromthe context, all numerical values provided herein are modified by theterm “about.”

Ranges provided herein are understood to be shorthand for all of thevalues within the range. For example, a range of 1 to 50 is understoodto include any number, combination of numbers, or sub-range from thegroup consisting of 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15,16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33,34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, or 50,as well as all intervening decimal values between the aforementionedintegers such as, for example, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8,and 1.9. With respect to sub-ranges, “nested sub-ranges” that extendfrom either end point of the range are specifically contemplated. Forexample, a nested sub-range of an exemplary range of 1 to 50 maycomprise 1 to 10, 1 to 20, 1 to 30, and 1 to 40 in one direction, or 50to 40, 50 to 30, 50 to 20, and 50 to 10 in the other direction.

To facilitate a more complete understanding of the present invention, aprocess of manufacturing a silicon carbide (SiC) Schottky barrier diodedevice according to an embodiment of the present invention will bedescribed in detail with reference to FIGS. 1 through 4.

As shown in FIG. 1, a primary n− epitaxial layer 11 may be deposited onan n+ substrate 10 that is, for example, a wafer. In this case, thedoping concentration of the n+ substrate 10 may be about 10¹⁸/cm³, andthe doping concentration of the primary n− epitaxial layer 11 may rangefrom about 10¹⁵/cm³ to about 10¹⁶/cm³. The first n− epitaxial layer 11may have a thickness of about 2 μm or more, such that n+ ions can beimplanted into the first n− epitaxial layer 11.

As shown in FIG. 2, an n+ epitaxial region 13 may be formed byimplanting n+ ions into the central region of the primary n− epitaxiallayer 11. For example, a mask may be applied to other regions of theprimary n− epitaxial layer 11 except the central region thereof, andthen n+ ions may be implanted into the central region of the primary n−epitaxial layer 11 to form the n+ epitaxial region 13 in the centralregion of the primary n− epitaxial layer 11.

In order to stabilize a damaged wafer surface after the ionimplantation, heat-treatment may be performed at a high temperature ofabout 1,400° C. to about 1,600° C. or in an atmosphere of, e.g.,hydrogen gas. Also, in order to improve the withstanding voltagecharacteristics, after the n− epitaxial layer 11 is additionallydeposited, the n+ epitaxial region 13 may be more thickly formed on thecentral region thereof through ion implantation.

FIG. 7 illustrates an example in which a secondary n− epitaxial layer 12is additionally deposited on the primary n− epitaxial layer 11 and then+ epitaxial region 13 to improve the withstanding voltagecharacteristics. The doping concentration of the secondary n− epitaxiallayer 12 may be similar to that of the primary n− epitaxial layer. Inthis case, when the n+ epitaxial region 13 is also formed in the centralregion of the additionally-deposited secondary n− epitaxial layer 12, asshown in FIG. 6C, the n+ epitaxial region 13 may become a highly-dopedconduction region that is adjacent to a Schottky metal layer 14. Forexample, the doping concentration of the n+ epitaxial region 13 mayrange from about 10¹⁷/cm³ to about 10¹⁹/cm³. According to the invention,the doping concentration, or level, of the n+ epitaxial region 13 ispreferably higher than the doping concentration, or level, of theadjoining n− epitaxial regions 11 and 12.

An ohmic metal layer may also be deposited under the wafer, i.e., the n+substrate 10, and the Schottky metal layer 14 may be deposited on thesecondary n− epitaxial layer 12 to form a SiC Schottky bather diodedevice according to an embodiment of the present invention.

The Schottky metal layer 14 may be formed of metal such as, for example,Ti, Ni, Mo, and/or W, and an additional termination structure may beapplied to the Schottky metal layer 14 to improve the withstandingvoltage characteristics. The ohmic metal layer 15 may be formed of metalsuch as, for example, Ni, Ti, TiC, and/or TaC. Heat-treatment may beperformed on each of the metal layers 14 and 15 to achieve the desiredcharacteristics thereof.

As shown in FIG. 6C, the Schottky metal layer 14 may be directlydeposited on the n+ epitaxial region 13 without formation of thesecondary n− epitaxial layer. In this case, separate heat-treatmentconditions and junction metal may be applied to secure the Schottkyjunction characteristics. It may be necessary to optimize thetermination structure in order to secure the desired breakdownconditions, and one of skill in the art will recognize that thisoptimization will vary depending upon the exact composition andstructure of the SiC Schottky diode.

The structure of a silicon carbide Schottky barrier diode device that ismanufactured by the above process will be described with reference toFIG. 4. The silicon carbide Schottky barrier diode device may include aprimary n− epitaxial layer 11 deposited on an n+ substrate 10, an n+epitaxial region 13 that is formed in an exemplary embodiment byimplanting n+ ions into the central region of the primary n− epitaxiallayer 11, and a Schottky metal layer 14 deposited over the n+ epitaxialregion 13. A secondary n− epitaxial layer 12 may be further deposited onthe primary n− epitaxial layer 11 and the n+ epitaxial region 13, andunder the Schottky metal layer 14.

Accordingly, when a forward voltage is applied as shown in FIG. 5, acurrent sequentially flows from the Schottky metal layer 14, through thesecond n− epitaxial layer 12, through the n+ epitaxial region 13, andtoward the n+ substrate 10. The on-resistance and breakdown voltage willvary according to the doping concentrations of the primary and secondaryn− epitaxial layers 11 and 12, the ion implantation of the n+ epitaxialregion 13, and the thickness of each epitaxial layer, thereby providingmultiple approaches for optimization. For example, ion implantation maybe used to reduce forward on-resistance without reducing the breakdownvoltage, and the area of a device can be reduced in proportion to theimprovement of current density, thereby achieving a substantial savingsin cost.

Test Examples

A silicon carbide (SiC) Schottky bather diode device according to anembodiment of the present invention was simulated using TCAD to verify areduction in the on-resistance relative to a conventional art diode, andthe test results are shown in FIGS. 7 and 8.

In this case, the test was performed using: 1) a conventional artstructure lacking an n+ epitaxial layer into which ions are implanted,in which a conduction region is lightly doped (see, e.g., FIG. 6A); 2) astructure in which an n+ epitaxial region 13—i.e. a highly-dopedconduction region—is partially formed (see FIG. 6B), and 3) a structurein which a Schottky metal layer 14 is directly deposited on an n+epitaxial region 13 that is more thickly formed (see FIG. 6C).

According to the breakdown voltage simulation, as shown in FIG. 7, it ispossible to obtain similar breakdown characteristics between the threedifferent structures. Without being bound by theory, it is believed thatthe primary breakdown mechanism results from electric field crowding onthe edge of the Schottky junction, i.e. the Schottky edge termination.However, the I-V characteristics showed that the on-resistance wasreduced according by increasing the n+ region as shown in FIG. 8. Theon-resistance was lowest when the highly-doped conduction region wasextended to the Schottky contact (see, e.g., FIG. 6C). Without beingbound by theory, it could be understood that upon application of aforward voltage, the resistance was significantly reduced because the n+highly-doped region, i.e., the n+ epitaxial region 13 existed in thecurrent-flowing conduction region.

Based on the above results, while the on-resistance was reduced and thecharacteristics were improved upon forward voltage application byforming the n+ region only in the conduction region, it can be verifiedthat breakdown characteristics similar to those of the related art canbe secured because the n− region exists in the Schottky edgetermination. Additionally, if a high-voltage termination structure suchas an electric field plate structure or electric field limiting framestructure for improvement of the withstanding voltage characteristics isused, the high-voltage termination structure can achieve an increasedeffect of the breakdown voltage in all cases.

According to an embodiment of the present invention, it is possible toprovide a power device in which the on-resistance is reduced by allowinga current to flow into a highly-doped conduction region (n+ epitaxiallayer) upon application of a forward voltage, and the breakdown voltageis not reduced upon application of a backward voltage, by implanting n+ions into a conduction epitaxial layer of the power device to overcomeweakening of current characteristics due to increase of theon-resistance upon application of the forward voltage.

The invention has been described in detail with reference to exemplaryembodiments thereof. However, it will be appreciated by those skilled inthe art that changes may be made in these embodiments without departingfrom the principles and spirit of the invention, the scope of which isdefined in the appended claims and their equivalents.

What is claimed is:
 1. A silicon carbide Schottky bather diode devicecomprising: an n+ substrate; a first n− epitaxial layer deposited on then+ substrate, wherein the first n− epitaxial layer contains a first n+epitaxial region; and a Schottky metal layer deposited on the first n+epitaxial region such that the first n+ epitaxial region is sandwichedbetween the Schottky metal layer and the n+ substrate.
 2. The siliconcarbide Schottky barrier diode device of claim 1, further comprising anohmic metal layer joined to the n+ substrate such that the n+ substrateis sandwiched between the ohmic metal layer and the first n− epitaxiallayer.
 3. The silicon carbide Schottky barrier diode device of claim 1,wherein the first n+ epitaxial region is formed by implanting n+ ionsinto the first n− epitaxial layer.
 4. The silicon carbide Schottkybarrier diode device of claim 3, wherein the first n+ epitaxial regionis substantially centrally located within the first n− epitaxial layer.5. The silicon carbide Schottky barrier diode device of claim 3, whereinthe first n+ epitaxial region has a first doping concentration and thefirst n− epitaxial layer has a second doping concentration, the firstdoping concentration is greater than the second doping concentration. 6.The silicon carbide Schottky barrier diode device of claim 5, whereinthe first doping concentration ranges from about 10¹⁷/cm³ to about10¹⁹/cm³, and the second doping concentration ranges from about 10¹⁵/cm³to about 10¹⁶/cm³.
 7. The silicon carbide Schottky barrier diode deviceof claim 1, further comprising a second n− epitaxial layer deposited onthe first n− epitaxial layer and the first n+ epitaxial region such thatthe second n− epitaxial layer is sandwiched between the first n−epitaxial layer and the Schottky metal layer.
 8. The silicon carbideSchottky barrier diode device of claim 7, further comprising a second n+epitaxial region located within the second n− epitaxial layer.
 9. Thesilicon carbide Schottky barrier diode device of claim 8, wherein thesecond n+ epitaxial region is substantially continuous with the first n+epitaxial region.
 10. The silicon carbide Schottky barrier diode deviceof claim 1, wherein the first n− epitaxial layer is at least 2 μm inthickness.
 11. The silicon carbide Schottky barrier diode device ofclaim 1, wherein the doping concentration of the first n− epitaxiallayer is about 10¹⁵/cm³ to about 10¹⁶/cm³.
 12. The silicon carbideSchottky barrier diode device of claim 1, wherein the dopingconcentration of the first n+ epitaxial layer is about 10¹⁷/cm³ to about10¹⁹/cm³.
 13. The silicon carbide Schottky barrier diode device of claim1, wherein the doping concentration of the first n+ substrate is about10¹⁸/cm³.
 14. A method for manufacturing the silicon carbide Schottkybarrier diode device of claim 1, comprising: depositing the first n−epitaxial layer on the n+ substrate; forming the first n+ epitaxialregion by implanting n+ ions into a substantially centrally locatedregion of the first n− epitaxial layer; and depositing a Schottky metallayer directly on the n+ epitaxial region.
 15. The method of claim 14,further comprising forming a second n− epitaxial layer on the first n−epitaxial layer such that the second n− epitaxial layer is sandwichedbetween the n− epitaxial layer and the Schottky metal layer.
 16. Themethod of claim 14, further comprising forming a second n+ epitaxialregion in the second n− epitaxial layer by ion implantation.
 17. Themethod of claim 16, wherein the second n+ epitaxial region issubstantially contiguous with the first n+ epitaxial region.
 18. Asilicon carbide Schottky barrier diode device comprising: an n+substrate; a first n− epitaxial layer deposited on the n+ substrate,wherein the first n− epitaxial layer contains a first n+ epitaxialregion formed by implanting n+ ions into the first n− epitaxial layer,the first n+ epitaxial region having a first doping concentration andthe first n− epitaxial layer having a second doping concentration, thefirst doping concentration being greater than the second dopingconcentration; a Schottky metal layer deposited on the first n+epitaxial region, wherein the first n+ epitaxial region is sandwichedbetween the Schottky metal layer and the n+ substrate; a second n−epitaxial layer deposited on the first n− epitaxial layer and the firstn+ epitaxial region such that the second n− epitaxial layer issandwiched between the first n− epitaxial layer and the Schottky metallayer; and an ohmic metal layer joined to the n+ substrate such that then+ substrate is sandwiched between the ohmic metal layer and the firstn− epitaxial layer.
 19. The silicon carbide Schottky barrier diodedevice of claim 18, wherein the first doping concentration ranges fromabout 10¹⁷/cm³ to about 10¹⁹/cm³, and the second doping concentrationranges from about 10¹⁵/cm³ to about 10¹⁶/cm³.